View APTGL475DA120D3G_4545407.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

APTGL475DA120D3G
Boost chopper Trench + Field Stop IGBT4 Power Module
3
VCES = 1200V IC = 475A @ Tc = 80C
Application * AC and DC motor control * Switched Mode Power Supplies * Power Factor Correction Features * Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current - Low switching losses - Soft recovery parallel diodes - Low diode VF - RBSOA and SCSOA rated * Kelvin emitter for easy drive * High level of integration * M6 power connectors Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * RoHS Compliant
Q2 6 7
1
2
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C Max ratings 1200 610 475 900 20 2080 800A @ 1100V Unit V A V W
September, 2008 1-5 APTGL475DA120D3G - Rev 0
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
www.microsemi.com
APTGL475DA120D3G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25C VGE = 15V IC = 400A Tj = 125C VGE = VCE , IC = 15mA VGE = 20V, VCE = 0V Min Typ 1.8 2.2 5.8 Max 5 2.2 6.5 400 Unit mA V V nA
5.0
Dynamic Characteristics
Symbol Characteristic Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE= -8V / 15V ; VCE=600V IC=400A Inductive Switching (25C) VGE = 15V VCE = 600V IC = 400A RG = 1 Inductive Switching (150C) VGE = 15V VCE = 600V IC = 400A RG = 1 VGE = 15V TJ = 150C VCE = 600V IC = 400A TJ = 150C RG = 1 VGE 15V ; VBus = 900V tp 10s ; Tj = 150C Min Typ 24.6 1.62 1.38 2.3 200 40 400 70 220 50 500 80 33 42 1600 ns Max Unit nF C
ns
mJ mJ A
Diode ratings and characteristics
Symbol Characteristic VRRM Maximum Repetitive Reverse Voltage IRRM IF VF trr Qrr Err Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy IF = 400A VR = 600V di/dt = 7000A/s IF = 400A VGE = 0V Test Conditions VR=1200V Tj = 25C Tj = 150C TC = 80C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Min 1200 Typ Max 250 2000 400 1.7 1.65 155 300 37.2 78 16 32 2.2 Unit V A A V ns C mJ
September, 2008 2-5 APTGL475DA120D3G - Rev 0
www.microsemi.com
APTGL475DA120D3G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight For terminals To Heatsink M6 M6 IGBT Diode 2500 -40 -40 -40 3 3 Min Typ Max 0.072 0.14 175 125 125 5 5 350 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
D3 Package outline (dimensions in mm)
1
A
DETAIL A
www.microsemi.com
3-5
APTGL475DA120D3G - Rev 0
September, 2008
APTGL475DA120D3G
Typical Performance Curve
800 Output Characteristics (VGE=15V) Output Characteristics 800 TJ = 150C 600 IC (A)
TJ=25C TJ=150C VGE=19V VGE=15V
600 IC (A)
400
400
VGE=9V
200
200
0 0 1 2 VCE (V) Transfert Characteristics
TJ=25C
0 3 4 0 1 2 VCE (V) 3 4
800
80
Energy losses vs Collector Current
VCE = 600V VGE = 15V RG = 1. TJ = 150C Eoff
600 IC (A) E (mJ)
60
400
TJ=150C
40
Err
200
20
Eon
0 5 6 7 8 9 VGE (V) Switching Energy Losses vs Gate Resistance 180 150 120 E (mJ) 90 60 30 0 0 2.5 5 7.5 Gate Resistance (ohms) 10
Eoff Err
0 10 11 12 13 0 200 400 IC (A) Reverse Bias Safe Operating Area 960 800 640 IC (A) 480 320 160 0 0 300 600 900 VCE (V) 1200 1500
VGE=15V TJ=150C RG=1.
600
800
VCE = 600V VGE =15V IC = 400A TJ = 150C
Eon
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.08 Thermal Impedance (C/W)
0.9
0.06
IGBT
0.7 0.5 0.3
0.04
0.02
0.1 0.05 Single Pulse
0 0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
www.microsemi.com
4-5
APTGL475DA120D3G - Rev 0
September, 2008
APTGL475DA120D3G
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 180 150
ZCS VCE=600V D=50% RG=1 TJ=150C Tc=75C
Forward Characteristic of diode 800
600 IF (A)
120 90 60 30 0 0 120 240 360
Hard switching ZVS
400
200
TJ=150C TJ=25C
0 480 600 0 0.4 0.8 IC (A) 1.2 1.6 VF (V) 2 2.4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.16 Thermal Impedance (C/W) 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0.9 0.7 0.5 0.3 Diode
0 0.00001
Rectangular Pulse Duration in Seconds
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
5-5
APTGL475DA120D3G - Rev 0
September, 2008

▲Up To Search▲

Price & Availability of APTGL475DA120D3G

	To Download APTGL475DA120D3G Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .